Search results for "SPIN INJECTION"
showing 6 items of 6 documents
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
2018
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…
Importance of spin current generation and detection by spin injection and the spin Hall effect for lateral spin valve performance.
2018
Lateral spin valves are attractive device geometries where functional spin currents can be generated and detected by various mechanisms, such as spin injection and the direct and the inverse spin Hall effect. To understand the mechanisms behind these effects better, as well as their potential for application in devices, we combine multiple mechanisms in multi-terminal Pt-Py-Cu lateral spin valves: we generate pure spin currents in the copper spin conduit both via the spin Hall effect in platinum and electric spin injection from permalloy and detect signals both via conventional non-local detection and via the inverse spin Hall effect in the same device at variable temperatures. Differences …
Domain wall motion in a diffusive weak ferromagnet
2019
We study the domain wall motion in a disordered weak ferromagnet, induced by injecting a spin current from a strong ferromagnet. Starting from the spin diffusion equation describing the spin accumulation in the weak ferromagnet, we calculate the force and torque acting on the domain wall. We also study the ensuing domain wall dynamics, and suggest a possible measurement method for detecting the domain wall motion via measuring the additional resistance.
Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer
2017
State of the Art in Alq3-Based Spintronic Devices
2015
Since the first observation of a magnetoresistance signal in a vertical organic spin valve in 2004, tris (8-hydroxyquinoline) aluminium (Alq3) molecule has become a standard material for organic spintronics devices. This chapter will briefly present the state of the art on Alq3-based spintronic devices and the different approaches applied through the years to try to optimize these systems. It will be remarked that, despite extensively investigated, many fundamental questions regarding the spin injection and transport mechanisms through the organic layer are still unclear. The chapter will also present some of the most controversial topics in the organic spintronic area and it will highlight…
Tuning Spin Current Injection at Ferromagnet-Nonmagnet Interfaces by Molecular Design.
2020
There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore the injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both the spin injection efficiency at the interface and the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.